Cu(In,Ga)(S,Se)2
(CIGS) thin films were formed by
a low cost solution-based approach using metal sulfide
precursors. The stoichiometry of the absorber layer is tailored in
order to improve film morphology and electrical properties.
Cuy
ln0.7Ga0.3Se2
films were prepared with a varied Cu content
(0.8>y>1.1) and were completed in solar cell devices. The
compositional, structural and electrical properties of the devices
were investigated. Increased Cu content improves lateral
crystallization, but results in the formation of Cu-rich secondary
phases in-between CIGS grain boundaries. Characterization of
the completed devices shows that Cu content has an important
effect on the device electrical properties and the dominant
recombination mechanisms.
Funding
EPSRC grant number EP/N026438/1
History
School
Mechanical, Electrical and Manufacturing Engineering
Research Unit
Centre for Renewable Energy Systems Technology (CREST)
Published in
IEEE PVSC 44
Citation
ARNOU, P. ... et al., 2017. Variation of Cu content of sprayed Cu(In,Ga)(S,Se)2 solar cells based on a Thiol-Amine solvent mixture. Presented at: IEEE PVSC 44, Washington DC, USA, 25-30 June 2017, pp.146-150.