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Download fileVariation of Cu content of sprayed Cu(In,Ga)(S,Se)2 solar cells based on a Thiol-Amine solvent mixture
conference contribution
posted on 2017-08-18, 13:02 authored by Panagiota Arnou, Sona Ulicna, Alexander Eeles, Mustafa Togay, Lewis Wright, Andrei MalkovAndrei Malkov, Michael WallsMichael Walls, Jake BowersJake BowersCu(In,Ga)(S,Se)2
(CIGS) thin films were formed by
a low cost solution-based approach using metal sulfide
precursors. The stoichiometry of the absorber layer is tailored in
order to improve film morphology and electrical properties.
Cuy
ln0.7Ga0.3Se2
films were prepared with a varied Cu content
(0.8>y>1.1) and were completed in solar cell devices. The
compositional, structural and electrical properties of the devices
were investigated. Increased Cu content improves lateral
crystallization, but results in the formation of Cu-rich secondary
phases in-between CIGS grain boundaries. Characterization of
the completed devices shows that Cu content has an important
effect on the device electrical properties and the dominant
recombination mechanisms.
Funding
EPSRC grant number EP/N026438/1
History
School
- Mechanical, Electrical and Manufacturing Engineering
Research Unit
- Centre for Renewable Energy Systems Technology (CREST)
Published in
IEEE PVSC 44Citation
ARNOU, P. ... et al., 2017. Variation of Cu content of sprayed Cu(In,Ga)(S,Se)2 solar cells based on a Thiol-Amine solvent mixture. Presented at: IEEE PVSC 44, Washington DC, USA, 25-30 June 2017, pp.146-150.Publisher
© IEEEVersion
- AM (Accepted Manuscript)
Acceptance date
2017-06-30Publication date
2017Notes
© IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.ISBN
9781509056057Publisher version
Language
- en