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Bipolaron anisotropic flat bands, Hall mobility edge, and metal-semiconductor duality of overdoped high-Tc oxides

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journal contribution
posted on 27.04.2006 by A.S. Alexandrov
Hole bipolaron band structure with two flat anisotropic bands is derived for oxide superconductors. Strong anisotropy leads to one-dimensional localization in a random field which explains the metal-like value of the Hall effect and the semiconductorlike doping dependence of resistivity of overdoped oxides. Doping dependence of Tc and λH(0) as well as the low-temperature dependence of resistivity, of the Hall effect, Hc2(T) and robust features of angle-resolved photoemission spectroscopy of several high-Tc copper oxides are explained.

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  • Science

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  • Physics

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204256 bytes

Citation

ALEXANDROV, A.S., 1996. Bipolaron anisotropic flat bands, Hall mobility edge, and metal-semiconductor duality of overdoped high-Tc oxides. Physical Review B, 53(5), pp 2863–2869

Publisher

© American Physical Society

Publication date

1996

Notes

This article was published in the journal, Physical Review B [© American Physical Society]. It is also available at: http://link.aps.org/abstract/PRB/v53/p2863.

ISSN

1098-0121

Language

en

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