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Charge transfer properties in P3HT:graphene capped InAs/GaAs QDs hybrid heterostructure for photovoltaic application

journal contribution
posted on 10.08.2015, 12:45 by R. Bkakri, Olga Kusmartseva, Feodor Kusmartsev, Mo Song, L. Sfaxi, A. Bouazizi
In this work we have developed hybrid organic/inorganic nanostructure based on InAs/GaAs quantum dots (QDs) capped with P3HT:graphene organic nanocomposite using spin-coating method. InAs/GaAs QDs are grown by molecular beam epitaxy on n+-GaAs (0 0 1) substrate. The morphological properties are studied through atomic force microscopy (AFM) and scanning tunneling microscopy (STM). Raman spectroscopy analyzes show that the encapsulation of the InAs/GaAs QDs by P3HT:graphene nanocomposite keeps unchanged the indium concentration in the quantum dots due to the negligible strain effect of the organic cap layer on the QDs compared with the conventional GaAs cap layer. The quenching of the photoluminescence (PL) intensity of P3HT proves that an electrons transfer process from P3HT to graphene and from P3HT to InAs/GaAs QDs has occurred. We show that the proposed P3HT:graphene cap layer could replace the conventional GaAs cap layer for the elaboration of optoelectronic devices.

History

School

  • Science

Department

  • Physics

Published in

SYNTHETIC METALS

Volume

203

Pages

74 - 81 (8)

Citation

BKAKRI, R. ...et al., 2015. Charge transfer properties in P3HT:graphene capped InAs/GaAs QDs hybrid heterostructure for photovoltaic application. Synthetic Metals, 203, pp.74-81.

Publisher

© Elsevier

Version

VoR (Version of Record)

Publisher statement

This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/

Publication date

2015

Notes

This paper is closed access.

ISSN

0379-6779

Language

en

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