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Electromigration voiding in nanoindented, single crystal Al lines

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journal contribution
posted on 14.07.2009 by Vincent Dwyer, W.S. Wan Ismail
We consider the interpretation of some theoretical and experimental work regarding electromigration voiding in nanoindented, single crystal aluminum lines. A recently suggested voiding criterion of a critical accumulated flux divergence is found, in fact, to be identical to the widely accepted critical stress criterion. The inclusion of the stress dependence of the atomic diffusion coefficient is shown to be vital when the steady state is characterized by J ≠ 0, such as in the case of a void growing at a constant rate. It is found, for example, that the stress required for steady void growth, within single crystal Al lines, is probably significantly smaller than previously suggested.

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School

  • Mechanical, Electrical and Manufacturing Engineering

Citation

DWYER, V.M. and WAN ISMAIL, W.S., 2001. Electromigration voiding in nanoindented, single crystal Al lines. Journal of Applied Physics, 89 (5), pp. 3064-3066

Publisher

© American Institute of Physics.

Version

VoR (Version of Record)

Publication date

2001

Notes

This article was published in the serial, Journal of Applied Physics [© American Institute of Physics]. It is also available at: http://dx.doi.org/10.1063/1.1342436

ISSN

0021-8979

Language

en

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