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Microwave generation in synchronized semiconductor superlattices

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journal contribution
posted on 18.05.2017 by Marat Gaifullin, Natalia V. Alexeeva, Alexander E. Hramov, V.V. Makarov, V.A. Maksimenko, Alexey A. Koronovskii, Mark Greenaway, T.M. Fromhold, A. Patane, Christopher Mellor, Feodor Kusmartsev, Alexander Balanov
We study high-frequency generation in a system of electromagnetically coupled semiconductor superlattices fabricated on the same doped substrate. Applying a bias voltage to a single superlattice generates high-frequency current oscillations. We demonstrate that within a certain range of the applied voltage, the current oscillations within the superlattices can be self-synchronized, which leads to a dramatic rise in the generated microwave power. These results, which are in good agreement with our numerical model, open a promising practical route towards the design of high-power miniature microwave generators.

Funding

This work is supported by the Engineering and Physical Sciences Research Council (Grants No. EP/K503800/1 and No. EP/M016099/1). The numerical studies of the synchronization of the semiconductor superlattices is supported by the Russian Foundation for Basic Research (Grants No. 15-02-00624-a and No. 16-32-00272-mol-a). A. E. H. also acknowledges support from the Ministry of Education and Science of Russian Federation (Project No. 3.4593.2017/VU).

History

School

  • Science

Department

  • Physics

Published in

Phys. Rev. Applied

Volume

7

Citation

GAIFULLIN, M. ... et al, 2017. Microwave generation in synchronized semiconductor superlattices. Physical Review Applied, 7, 044024.

Publisher

© American Physical Society

Version

VoR (Version of Record)

Publisher statement

This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/

Publication date

2017

Notes

This paper was accepted for publication in the journal Physical Review Applied and the definitive published version is available at http://dx.doi.org/10.1103/PhysRevApplied.7.044024.

eISSN

2331-7019

Language

en

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