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Modeling evaporation, ion-beam assist, and magnetron sputtering of TiO 2 thin films over realistic timescales

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journal contribution
posted on 31.01.2013, 16:05 by Sabrina Blackwell, Roger Smith, Steven Kenny, Louis J. Vernon, Michael Walls
Results are presented for modeling the growth of TiO2 on the rutile (110) surface. We illustrate how long time scale dynamics techniques can be used to model thin film growth at realistic growth rates. The system evolution between deposition events is achieved through an on-the-fly Kinetic Monte Carlo method, which finds diffusion pathways and barriers without prior knowledge of transitions. We examine effects of various experimental parameters, such as substrate bias, plasma density, and stoichiometry of the deposited species. Growth of TiO2 via three deposition methods has been investigated: evaporation (thermal and electron beam), ion-beam assist, and reactive magnetron sputtering. We conclude that the evaporation process produces a void filled, incomplete structure even with the low-energy ion-beam assist, but that the sputtering process produces crystalline growth. The energy of the deposition method plays an important role in the film quality.

History

School

  • Science

Department

  • Mathematical Sciences

Citation

BLACKWELL, S. ... et al., 2012. Modeling evaporation, ion-beam assist, and magnetron sputtering of TiO 2 thin films over realistic timescales. Journal of Materials Research, 27 (5), pp. 799 - 805

Publisher

© Materials Research Society

Version

VoR (Version of Record)

Publication date

2012

Notes

This article was published in the Journal of Materials Research [© Materials Research Society] and the definitive version is available at: http://dx.doi.org/10.1557/jmr.2011.380

ISSN

0884-2914

eISSN

2044-5326

Language

en

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Keywords

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