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Optical transistor for amplification of radiation in a broadband terahertz domain

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posted on 27.01.2020 by Kristien Villegas, Feodor Kusmartsev, Yi Luo, Ivan Savenko
We propose a new type of optical transistor for a broadband amplification of THz radiation. It is made of a graphene–superconductor hybrid, where electrons and Cooper pairs couple by Coulomb forces. The transistor operates via the propagation of surface plasmons in both layers, and the origin of amplification is the quantum capacitance of graphene. It leads to THz waves amplification, the negative power absorption, and as a result, the system yields positive gain, and the hybrid acts like an optical transistor, operating with the terahertz light. It can, in principle, amplify even a whole spectrum of chaotic signals (or noise), that is required for numerous biological applications.

Funding

Institute for Basic Science in Korea (Project No. IBS-R024-D1) and the grant RFBR 18-29-20033 mk.

History

School

  • Science

Department

  • Physics

Published in

Physical Review Letters

Volume

124

Issue

8

Publisher

American Physical Society

Version

VoR (Version of Record)

Rights holder

© American Physical Society

Publisher statement

This paper was published in the journal Physical Review Letters and is available at https://doi.org/10.1103/PhysRevLett.124.087701.

Acceptance date

23/01/2020

Publication date

2020-02-26

Copyright date

2020

ISSN

0031-9007

eISSN

1079-7114

Language

en

Depositor

Prof Fedor Kusmartsev . Deposit date: 24 January 2020

Article number

087701

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