PhysRevLett.116.186603.pdf (1.19 MB)

Phonon-Assisted Resonant Tunneling of Electrons in Graphene–Boron Nitride Transistors

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posted on 25.09.2020 by EE Vdovin, A Mishchenko, Mark Greenaway, MJ Zhu, D Ghazaryan, A Misra, Y Cao, SV Morozov, O Makarovsky, TM Fromhold, A Patanè, GJ Slotman, MI Katsnelson, AK Geim, KS Novoselov, L Eaves
We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene-boron nitride heterostructures and are close to peaks in the single phonon density of states.

Funding

This work was supported by the EU FP7 Graphene Flagship Project 604391, ERC Synergy Grant, Hetero2D, EPSRC, the Royal Society, U.S. Army Research Office, U.S. Navy Research Office, and U.S. Airforce Research Office. M. T. G. acknowledges The Leverhulme Trust for support. S. V. M. and E. E. V. were supported by NUST MISiS (Grant No. K1-2015-046) and RFBR (Grants No. 15-02-01221 and No. 14-02-00792). G. J. S. and M. I. K. acknowledge financial support from the ERC Advanced Grant No. 338957 FEMTO/NANO.

History

School

  • Science

Department

  • Physics

Published in

Physical Review Letters

Volume

116

Issue

18

Publisher

American Physical Society

Version

VoR (Version of Record)

Rights holder

© The Authors

Publisher statement

This is an Open Access Article. It is published by the American Physical Society under the Creative Commons Attribution 3.0 Unported Licence (CC BY 3.0). Full details of this licence are available at: https://creativecommons.org/licenses/by/3.0/

Acceptance date

05/05/2016

Publication date

2016-05-05

ISSN

0031-9007

eISSN

1079-7114

Language

en

Depositor

Deposit date: 24 September 2020

Article number

186603

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