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Preparation of silicon carbide by electrospraying of a polymeric precursor

journal contribution
posted on 12.09.2016 by Dmitry A. Grigoriev, Mohan J. Edirisinghe, Xujin Bao, Julian R.G. Evans, Zofia B. Luklinska
Silicon carbide (SiC) coatings and films have been prepared for the first time by electrostatic atomization of a solution of a polymeric precursor and deposition on to alumina and zirconia substrates. The deposits were heated to 13008C prior to their examination by X-ray energy-dispersive spectra and selected-area diffraction in scanning and transmission electron microscopes. The results show that these coatings and films are crystalline and probably consist of co-existing a- SiC and b-SiC phases.

Funding

We thank the Royal Society of the UK for funding electrostatic atomisation research at Queen Mary, University of London, by providing an equipment grant to Professor Edirisinghe and a visiting post-doctoral fellowship to Dr Grigoriev.

History

School

  • Aeronautical, Automotive, Chemical and Materials Engineering

Department

  • Materials

Published in

Phil. Mag. Lett.

Volume

81

Pages

285 - 291

Citation

GRIGORIEV, D. ... et al., 2001. Preparation of silicon carbide by electrospraying of a polymeric precursor. Philosophical Magazine Letters, 81 (4), pp.285-291.

Publisher

© Taylor & Francis

Version

VoR (Version of Record)

Publisher statement

This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/

Publication date

2001

Notes

Closed access.

ISSN

0950-0839

eISSN

1362-3036

Language

en

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