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Sub-terahertz amplification in a semiconductor superlattice with moving charge domains

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journal contribution
posted on 17.04.2015 by V.V. Makarov, Alexander E. Hramov, Alexey A. Koronovskii, Kirill Alekseev, V.A. Maximenko, Mark Greenaway, T.M. Fromhold, Olga I. Moskalenko, Alexander Balanov
We theoretically study the high-frequency response of charge domains traveling through a strongly coupled semiconductor superlattice with an applied harmonic electromagnetic signal. Our calculations show that the superlattice alone can amplify signals with a frequency close to the domain transient frequency. Moreover, we show that if the superlattice is connected to a resonator, amplification becomes possible for much higher frequencies of the external signal (several hundred GHz). These promising results open the way to using semiconductor superlattices as efficient sub-THz amplifiers.

Funding

Russian Scientific Foundation supported study of the semiconductor superlattice coupled to resonator (Grant No. 14-12-00222). M.T.G. acknowledges financial support from the Leverhulme Trust (UK).

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School

  • Science

Department

  • Physics

Published in

APPLIED PHYSICS LETTERS

Volume

106

Issue

4

Pages

? - ? (4)

Citation

MAKAROV, V.V. ... et al, 2015. Sub-terahertz amplification in a semiconductor superlattice with moving charge domains. Applied Physics Letters, 106 (4), 043503.

Publisher

© American Institute of Physics

Version

VoR (Version of Record)

Publisher statement

This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/

Publication date

2015

Notes

This article was published in the journal Applied Physics Letters [© AIP Publishing]. It is also available at: http://dx.doi.org/10.1063/1.4906531

ISSN

0003-6951

Language

en

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