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The effect of collector doping on the high-frequency generation in strongly coupled semiconductor superlattice

journal contribution
posted on 18.05.2015 by V.A. Maksimenko, V.V. Makarov, Alexey A. Koronovskii, Kirill Alekseev, Alexander Balanov, Alexander E. Hramov
This letter focuses on the analysis of the spatio-temporal dynamics of charge domains in strongly coupled semiconductor superlattices with the Ohmic emitter and collector contacts. Our numerical simulations, based on the semiclassical approximation of the electron transport, show that the collector doping can dramatically affect the charge dynamics in the semiconductor structure and, therefore, the output AC power. We demonstrate that the appropriately chosen doping of the collector contacts can considerably increase the power of the generated signal.

History

School

  • Science

Department

  • Physics

Published in

EPL

Volume

109

Issue

4

Citation

MAKSIMENKO, V.A. ... et al, 2015. The effect of collector doping on the high-frequency generation in strongly coupled semiconductor superlattice. EPL, 109 (4), 47007.

Publisher

IOP Publishing (© EPLA)

Version

NA (Not Applicable or Unknown)

Publisher statement

This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/

Publication date

2015

Notes

This paper is closed access until 4th March 2016.

ISSN

0295-5075

eISSN

1286-4854

Language

en

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