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The effect of collector doping on the high-frequency generation in strongly coupled semiconductor superlattice
journal contributionposted on 18.05.2015 by V.A. Maksimenko, V.V. Makarov, Alexey A. Koronovskii, Kirill Alekseev, Alexander Balanov, Alexander E. Hramov
Any type of content formally published in an academic journal, usually following a peer-review process.
This letter focuses on the analysis of the spatio-temporal dynamics of charge domains in strongly coupled semiconductor superlattices with the Ohmic emitter and collector contacts. Our numerical simulations, based on the semiclassical approximation of the electron transport, show that the collector doping can dramatically affect the charge dynamics in the semiconductor structure and, therefore, the output AC power. We demonstrate that the appropriately chosen doping of the collector contacts can considerably increase the power of the generated signal.