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Transparent heater based on Al,Ga Co-doped ZnO thin films

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journal contribution
posted on 26.11.2018 by D.S.Y. (Subhashi) Jayathilake, Jagdeep Sagu, Upul Wijayantha-Kahagala-Gamage
Al, Ga co-doped ZnO thin films were deposited on to glass substrates by aerosol assisted chemical transport (AACT) and were studied for application as transparent thin film heaters. The film thickness was around 400 nm after 60 min of AACT deposition; this gave a sheet resistance of 142.5 Ω/sq, which corresponded to a resistivity of 5.7 x 10-3 Ω.cm. The thin films exhibited a maximum transmittance of 90% in the visible region. A mean temperature of 132.3 oC was reached after applying a voltage of 18 V for 10 min, giving a power consumption of 2.11 W. These results could provide a possibility to use Al, Ga co-doped ZnO thin films as transparent heaters to replace the more expensive indium tin oxide.

Funding

These research findings/observations were made whilst investigating affordable indium free TCO materials funded by EPSRC (EP/L017709/1).

History

School

  • Science

Department

  • Chemistry

Published in

Materials Letters

Citation

JAYATHILAKE, D.S.Y., SAGU, J.S. and WIJAYANTHA, K.G.U., 2018. Transparent heater based on Al,Ga Co-doped ZnO thin films. Materials Letters, 237, pp. 249-252.

Publisher

© Elsevier

Version

AM (Accepted Manuscript)

Publisher statement

This paper was accepted for publication in the journal Materials Letters and the definitive published version is available at https://doi.org/10.1016/j.matlet.2018.11.092.

Acceptance date

15/11/2018

Publication date

2018-11-15

ISSN

0167-577X

Language

en

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