Achieving both low lattice thermal conductivity and high hardness by the design of bonding structure
Bonding engineering and high entropy effect have a profound impact on lattice vibration and structural stability, which can be used to improve the lattice thermal conductivity and mechanical properties of material. SbSn, VSn and SeTe were simultaneously introduced in the SnTe system via the multi-element alloying design of (SnTe)x(Sb2Se3), which was produced by vacuum melting and spark plasma sintering technology. The above defects induce abundant lattice distortion and mass fluctuations, which can be stabilized in the high entropy system. Lattice distortion and mass fluctuations increase phonon scattering, resulting in reduced lattice thermal conductivity from 2.42 Wm−1K−1 for pure SnTe alloy to 1.15 Wm−1K−1 for (SnTe)10(Sb2Se3) at 323K. The calculations of -pCOHP and charge density verify that soft bonds and oscillation space exist in the system, which reveals the origin of the decrease in thermal conductivity from the perspective of bonding and the heat consumption caused by oscillation. With Sb2Se3 alloying, material hardness greatly increased from 82.7 HV for pure SnTe alloy to 165.7 HV for (SnTe)10(Sb2Se3). The enhancement of hardness can be ascribed to two factors. One is an increase in average bond strength, the other is from the skeleton structure formed by stronger bonds. The accurate design of bonding structure provides an effective way to simultaneously obtain high hardness and low lattice thermal conductivity.
Funding
National Natural Science Foundation of China (No. 51474139)
“Take on challenges and assume leadership” project from Shangrao City of Jiangxi Province (China) (Grant No. 2022A006)
History
School
- Aeronautical, Automotive, Chemical and Materials Engineering
Department
- Materials
Published in
Ceramics InternationalVolume
51Issue
3Pages
3759-3765Publisher
ElsevierVersion
- AM (Accepted Manuscript)
Rights holder
© Elsevier Ltd and Techna Group S.r.l.Publisher statement
This manuscript version is made available under the CC-BY-NC-ND 4.0 license https://creativecommons.org/licenses/by-nc-nd/4.0/Acceptance date
2024-11-21Publication date
2024-11-22Copyright date
2024ISSN
0272-8842eISSN
1873-3956Publisher version
Language
- en