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An analytical model of the microstructure in near-bamboo interconnects

journal contribution
posted on 07.11.2011, 14:00 by Vincent Dwyer
We aim here to describe electromigration-induced interconnect failure using a one-dimensional microstructure model (already one-dimensional models are used for the stress evolution). One might expect such a model to be reasonably successful because either (i) line widths are well below grain-boundary diameters (e.g. in as-patterned aluminium) or (ii) sidewall or topside surfaces provides the dominant diffusion path (e.g. in post-pattern annealed aluminium or copper). Our simple model is based on the Theory of Runs from probability theory and consequently may be solved analytically. As a test, we demonstrate that the model is able to reproduce the cluster length statistics of the two-dimensional simulator MIT/EmSIM for narrow metal (near-bamboo) stripes to a very good approximation. The importance of developing such a model is that, because of its analytical nature, it may access important areas where statistics are difficult for the simulator, such as rare events—e.g. time-to-first-failure rather than average events such as the mean-time-to-failure—or impossible events such as σd ≠ 0.27. In addition, it should allow some light to be thrown on the validity of the failure-unit model used to obtain interconnect lifetimes.

History

School

  • Mechanical, Electrical and Manufacturing Engineering

Citation

DWYER, V.M., 2004. An analytical model of the microstructure in near-bamboo interconnects. Journal of Physics D: Applied Physics, 37 (3), pp. 422-431.

Publisher

© IOP Publishing Ltd

Version

VoR (Version of Record)

Publication date

2004

Notes

This item is Closed Access. This article was published in the Journal of Physics D: Applied Physics [© IOP Publishing Ltd] and the definitive version is available at: http://dx.doi.org/10.1088/0022-3727/37/3/020

ISSN

0022-3727;1361-6463

Language

en

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