Cox_2020_J._Phys._D__Appl._Phys._53_035005.pdf (2.13 MB)
Anomalous Nernst effect in Co2MnSi thin films
journal contribution
posted on 2019-11-21, 09:44 authored by Chris Cox, AJ Caruana, Michael Cropper, Kelly MorrisonKelly MorrisonSeparation of the anomalous Nernst and spin Seebeck voltages in bilayer devices is often problematic when both layers are metallic, and the anomalous Nernst effect (ANE) becomes non-negligible. Co2MnSi, a strong candidate for the spin generator in spin Seebeck devices, is a predicted half-metal with 100% spin polarisation at the Fermi energy, however, typically B2 or L21 order is needed to achieve this. We demonstrate the optimisation of thin film growth of Co2MnSi on glass, where choice of deposition and annealing temperature can promote various ordered states. The contribution from the ANE is then investigated to inform future
measurements of the spin Seebeck. A maximum ANE coefficient of 0.662 µV K−1 is found for an A2 disordered polycrystalline Co2MnSi film. This value is comparable to ordered Heusler
thin films deposited onto single crystal substrates but obtained at a far lower fabrication temperature and material cost.
Funding
Feasibility of heat conversion to electricity by new spin Seebeck based thermoelectrics
Reliable, Scalable and Affordable Thermoelectrics: Spin Seebeck Based Devices for Energy Conversion
Underpinning Multi-User Equipment
History
School
- Science
Department
- Physics
Published in
Journal of Physics D: Applied PhysicsVolume
53Issue
3Publisher
IOP PublishingVersion
- VoR (Version of Record)
Rights holder
© IOPPublisher statement
This is an Open Access Article. It is published by IOP under the Creative Commons Attribution 3.0 Unported Licence (CC BY). Full details of this licence are available at: http://creativecommons.org/licenses/by/3.0/Acceptance date
2019-10-17Publication date
2019-11-06Copyright date
2020ISSN
0022-3727eISSN
1361-6463Publisher version
Language
- en