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Bidirectional electromigration failure

journal contribution
posted on 12.06.2015, 08:13 authored by M.K. Lim, Vassilios Chouliaras, C.L. Gan, Vincent Dwyer
Pulsed bidirectional currents in copper interconnect can cause electromigration (EM) –induced cyclic void behaviour. Cycles of void nucleation, growth, shrinkage and healing may be seen in the time variation of a line’s resistance profile. In practice each cycle appears to create some net effect so that, eventually, the net effect of many cycles adds up to the failure criterion. We seek here to investigate whether the Stress Evolutional Model of Korhonen et al. [1] is capable of describing the net effect of a voiding cycle.

History

School

  • Mechanical, Electrical and Manufacturing Engineering

Published in

MICROELECTRONICS RELIABILITY

Volume

53

Issue

9-11

Pages

1261 - 1265 (5)

Citation

LIM, M.K. et al., 2013. Bidirectional electromigration failure. Microelectronics Reliability, 53 (9-11), pp. 1261 - 1265

Publisher

© Elsevier Ltd

Version

VoR (Version of Record)

Publisher statement

This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/

Publication date

2013

Notes

This article is in closed access.

ISSN

0026-2714

Language

en

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