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Charge transport through functionalized graphene quantum dots embedded in a polyaniline matrix

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journal contribution
posted on 11.03.2021, 11:28 authored by Abu Bakar Siddique, Kelly MorrisonKelly Morrison, Guru Venkat, Ashit Kumar Pramanick, Niladri BanerjeeNiladri Banerjee, Mallar Ray
Nitrogen-functionalized graphene quantum dots embedded in a polyaniline matrix (NGQD−PANI) are extremely promising candidates for the development of next-generation sensors and for thermoelectric materials design with the distinct advantage of tunability of electronic properties by controlled doping and/or by controlling the inherent disorder in the microstructure. While their application is increasing in photovoltaics, energy storage, and sensing technologies, a clear understanding of conduction in these hybrid systems is lacking. Here, we report a comprehensive study of NGQD−PANI composites with varying NGQD doping levels over a wide range of temperature. We show distinct regimes of conduction as a function of temperature, which include: a transition from Efros− Shklovskii and Larkin−Khmelnitskii variable range hopping at low temperatures to thermally driven electron transport at higher temperatures. Importantly, we find a remarkable 50-fold enhancement in conductivity for 10% NGQD-doped samples and tunability of the crossover temperature between different regimes as a function of the applied voltage bias and doping. Our work provides a general framework to understand the interplay of extrinsic parameters like temperature and voltage bias with intrinsic material properties like doping, which drives the electronic properties in these hybrid systems of technological importance.

Funding

Spin-Orbit Coupling-Driven Superconducting Spintronics

Engineering and Physical Sciences Research Council

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History

School

  • Science

Department

  • Physics

Published in

ACS Applied Electronic Materials

Volume

3

Issue

3

Pages

1437-1446

Publisher

American Chemical Society (ACS)

Version

AM (Accepted Manuscript)

Rights holder

© American Chemical Society

Publisher statement

This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaelm.1c00057

Acceptance date

23/02/2021

Publication date

2021-03-04

Copyright date

2021

ISSN

2637-6113

eISSN

2637-6113

Language

en

Depositor

Dr Niladri Banerjee. Deposit date: 10 March 2021

Article number

acsaelm.1c00057