Deposition and application of a Mo–N back contact diffusion barrier yielding a 12.0% efficiency solution-processed CIGS solar cell using an amine–thiol solvent system
journal contribution
posted on 2019-03-19, 13:59 authored by Sona Ulicna, Panagiota Arnou, Ali Abbas, Mustafa Togay, Liam Welch, Martin BlissMartin Bliss, Andrei MalkovAndrei Malkov, Michael WallsMichael Walls, Jake BowersJake BowersThe use of a Mo–N barrier for solution-processed CIGS results in reduced MoSe2 formation. This enabled longer selenization time, enhanced grain growth and performance.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Published in
Journal of Materials Chemistry AVolume
7Issue
12Pages
7042 - 7052Citation
ULICNA, S. ... et al., 2019. Deposition and application of a Mo–N back contact diffusion barrier yielding a 12.0% efficiency solution-processed CIGS solar cell using an amine–thiol solvent system. Journal of Materials Chemistry A, 7 (12), pp. 7042-7052.Publisher
Royal Society of Chemistry (RSC)Version
- VoR (Version of Record)
Publisher statement
This work is made available according to the conditions of the Creative Commons Attribution 3.0 Unported Licence (CC BY). Full details of this licence are available at: http://creativecommons.org/licenses/by/3.0/Acceptance date
2019-01-31Publication date
2019-03-07Notes
This is an Open Access Article. It is published by RSC under the Creative Commons Attribution 3.0 Unported Licence (CC BY). Full details of this licence are available at: http://creativecommons.org/licenses/by/3.0/ISSN
2050-7488eISSN
2050-7496Publisher version
Language
- en
