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Deposition and application of a Mo–N back contact diffusion barrier yielding a 12.0% efficiency solution-processed CIGS solar cell using an amine–thiol solvent system

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posted on 19.03.2019 by Sona Ulicna, Panagiota Arnou, Ali Abbas, Mustafa Togay, Liam Welch, Martin Bliss, Andrei Malkov, Michael Walls, Jake Bowers
The use of a Mo–N barrier for solution-processed CIGS results in reduced MoSe2 formation. This enabled longer selenization time, enhanced grain growth and performance.

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School

  • Mechanical, Electrical and Manufacturing Engineering

Published in

Journal of Materials Chemistry A

Citation

ULICNA, S. ... et al., 2019. Deposition and application of a Mo–N back contact diffusion barrier yielding a 12.0% efficiency solution-processed CIGS solar cell using an amine–thiol solvent system. Journal of Materials Chemistry A, 7, pp. 7042-7052.

Publisher

Royal Society of Chemistry (RSC)

Version

VoR (Version of Record)

Publisher statement

This work is made available according to the conditions of the Creative Commons Attribution 3.0 Unported Licence (CC BY). Full details of this licence are available at: http://creativecommons.org/licenses/by/3.0/

Acceptance date

31/01/2019

Publication date

2019-03-07

Notes

This is an Open Access Article. It is published by RSC under the Creative Commons Attribution 3.0 Unported Licence (CC BY). Full details of this licence are available at: http://creativecommons.org/licenses/by/3.0/

ISSN

2050-7488

eISSN

2050-7496

Language

en

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