The use of a Mo–N barrier for solution-processed CIGS results in reduced MoSe2 formation. This enabled longer selenization time, enhanced grain growth and performance.
- Mechanical, Electrical and Manufacturing Engineering
Published inJournal of Materials Chemistry A
Pages7042 - 7052
CitationULICNA, S. ... et al., 2019. Deposition and application of a Mo–N back contact diffusion barrier yielding a 12.0% efficiency solution-processed CIGS solar cell using an amine–thiol solvent system. Journal of Materials Chemistry A, 7 (12), pp. 7042-7052.
PublisherRoyal Society of Chemistry (RSC)
VersionVoR (Version of Record)
Publisher statementThis work is made available according to the conditions of the Creative Commons Attribution 3.0 Unported Licence (CC BY). Full details of this licence are available at: http://creativecommons.org/licenses/by/3.0/
NotesThis is an Open Access Article. It is published by RSC under the Creative Commons Attribution 3.0 Unported Licence (CC BY). Full details of this licence are available at: http://creativecommons.org/licenses/by/3.0/