Deposition and application of a Mo–N back contact diffusion barrier yielding a 12.0% efficiency solution-processed CIGS solar cell using an amine–thiol solvent system
journal contributionposted on 19.03.2019, 13:59 by Sona Ulicna, Panagiota Arnou, Ali Abbas, Mustafa TogayMustafa Togay, Liam WelchLiam Welch, Martin BlissMartin Bliss, Andrei MalkovAndrei Malkov, Michael WallsMichael Walls, Jake BowersJake Bowers
The use of a Mo–N barrier for solution-processed CIGS results in reduced MoSe2 formation. This enabled longer selenization time, enhanced grain growth and performance.
- Mechanical, Electrical and Manufacturing Engineering