Deposition and application of a Mo–N back contact diffusion barrier yielding a 12.0% efficiency solution-processed CIGS solar cell using an amine–thiol solvent system

Ulicna, Sona; Arnou, Panagiota; Abbas, Ali; Togay, Mustafa; Welch, Liam; Bliss, Martin; Malkov, Andrei; Walls, Michael; Bowers, Jake

Ulicna - MoN back contact for 12pc CIGS - 2019.pdf (1.32 MB)

Deposition and application of a Mo–N back contact diffusion barrier yielding a 12.0% efficiency solution-processed CIGS solar cell using an amine–thiol solvent system

journal contribution

posted on 19.03.2019, 13:59 by Sona Ulicna, Panagiota Arnou, Ali Abbas, Mustafa Togay, Liam WelchLiam Welch, Martin BlissMartin Bliss, Andrei MalkovAndrei Malkov, Michael WallsMichael Walls, Jake BowersJake Bowers

The use of a Mo–N barrier for solution-processed CIGS results in reduced MoSe2 formation. This enabled longer selenization time, enhanced grain growth and performance.

History

School

Mechanical, Electrical and Manufacturing Engineering

Published in

Journal of Materials Chemistry A

Volume

7

Issue

12

Pages

7042 - 7052

Citation

ULICNA, S. ... et al., 2019. Deposition and application of a Mo–N back contact diffusion barrier yielding a 12.0% efficiency solution-processed CIGS solar cell using an amine–thiol solvent system. Journal of Materials Chemistry A, 7 (12), pp. 7042-7052.

Publisher

Royal Society of Chemistry (RSC)

Version

VoR (Version of Record)

Publisher statement

This work is made available according to the conditions of the Creative Commons Attribution 3.0 Unported Licence (CC BY). Full details of this licence are available at: http://creativecommons.org/licenses/by/3.0/

Acceptance date

31/01/2019

Publication date

2019-03-07

Notes

This is an Open Access Article. It is published by RSC under the Creative Commons Attribution 3.0 Unported Licence (CC BY). Full details of this licence are available at: http://creativecommons.org/licenses/by/3.0/