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Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots

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posted on 27.06.2017, 11:13 by O. Makarovsky, Lyudmila Turyanska, Nobuya Mori, Mark GreenawayMark Greenaway, Laurence Eaves, A. Patane, T.M. Fromhold, Samuel Lara-Avila, Sergey Kubatkin, Rositsa Yakimova
We report a simultaneous increase of carrier concentration, mobility and photoresponsivity when SiC-grown graphene is decorated with a surface layer of colloidal PbS quantum dots, which act as electron donors. The charge on the ionised dots is spatially correlated with defect charges on the SiC-graphene interface, thus enhancing both electron carrier density and mobility. This chargecorrelation model is supported by Monte Carlo simulations of electron transport and used to explain the unexpected 3-fold increase of mobility with increasing electron density. The enhanced carrier concentration and mobility give rise to Shubnikov-de Haas oscillations in the magnetoresistance, which provide an estimate of the electron cyclotron mass in graphene at high densities and Fermi energies up to 1.2 × 1013 cm−2 and 400 meV, respectively.

Funding

The work is supported by The Leverhulme Trust (grant number RPG-2013-242), the Engineering and Physical Sciences Council (grant number EP/M012700/1), and the EU Graphene Flagship.

History

School

  • Science

Department

  • Physics

Published in

2D Materials

Volume

4

Issue

3

Citation

MAKAROVSKY, O. ...et al., 2017. Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots. 2D Materials, 4: 031001.

Publisher

© the Authors. Published by IOP Publishing

Version

VoR (Version of Record)

Publisher statement

This work is made available according to the conditions of the Creative Commons Attribution 3.0 Unported (CC BY 3.0) licence. Full details of this licence are available at: http://creativecommons.org/licenses/by/3.0/

Acceptance date

02/06/2017

Publication date

2017-06-19

Notes

This is an Open Access Article. It is published by IOP under the Creative Commons Attribution 3.0 Unported Licence (CC BY). Full details of this licence are available at: http://creativecommons.org/licenses/by/3.0/

ISSN

2053-1583

Language

en

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