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Epitaxial growth, structural characterization, and exchange bias of noncollinear antiferromagnetic Mn3Ir thin films

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posted on 2024-06-06, 15:55 authored by James M Taylor, Edouard Lesne, Anastasios Markou, Fasil DejeneFasil Dejene, Benedikt Ernst, Adel Kalache, Kumari Gaurav Rana, Neeraj Kumar, Peter Werner, Claudia Felser, Stuart SP Parkin
Antiferromagnetic materials are of great interest for spintronics. Here we present a comprehensive study of the growth, structural characterization, and resulting magnetic properties of thin films of the noncollinear antiferromagnet Mn3Ir. Using epitaxial engineering on MgO (001) and Al2O3 (0001) single-crystal substrates, we control the growth of cubic γ-Mn3Ir in both (001) and (111) crystal orientations, and discuss the optimization of growth conditions to achieve high-quality crystal structures with low surface roughness. Exchange bias is studied in bilayers, with exchange bias fields as large as -29 mT (equivalent to a unidirectional anisotropy constant of 0.115ergcm-2 or 11.5nJcm-2) measured in Mn3Ir (111)/Permalloy heterostructures at room temperature. In addition, a distinct dependence of blocking temperature on in-plane crystallographic direction in Mn3Ir (001)/Permalloy bilayers is observed. These findings are discussed in the context of antiferromagnetic domain structures, and will inform progress towards chiral antiferromagnetic spintronic devices.

Funding

Antiferromagntic spintronics

European Commission

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History

School

  • Science

Department

  • Physics

Published in

Physical Review Materials

Volume

3

Issue

7

Publisher

American Physical Society (APS)

Version

  • AM (Accepted Manuscript)

Rights holder

© American Physical Society

Publisher statement

This paper by James M. Taylor, Edouard Lesne, Anastasios Markou, Fasil Kidane Dejene, Benedikt Ernst, Adel Kalache, Kumari Gaurav Rana, Neeraj Kumar, Peter Werner, Claudia Felser, and Stuart S. P. Parkin, Phys. Rev. Materials 3, 074409 was published by American Physical Society (APS) and the definitive published version is available at https://doi.org/10.1103/PhysRevMaterials.3.074409

Acceptance date

2019-03-13

Publication date

2019-07-30

Copyright date

2019

eISSN

2475-9953

Language

  • en

Depositor

Dr Fasil Dejene. Deposit date: 7 May 2024

Article number

074409

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