Erratum: "The role of defects in the electrical properties of NbO2 thin film vertical devices" [AIP Advances 6, 125006 (2016)]
journal contribution
posted on 2017-10-11, 09:07 authored by Toyanath Joshi, Pavel BorisovPavel Borisov, David LedermanWe noticed that Figures 1, 2, and 4(a) in the original publication were of poor quality due to formatting issues. This erratum provides corrected versions of those figures. The original results and discussions were not affected. RHEED images in the inset to the Fig. 1 are now fully visible. Figure 2 shows now properly fitted frames for the AFM image with the correctly placed height scales. Figure 4(a) shows now a correctly presented block diagram for the effective measurement circuit.
History
School
- Science
Department
- Physics
Published in
AIP AdvancesVolume
7Issue
1Citation
JOSHI, T., BORISOV, P. and LEDERMAN, D., 2017. Erratum: "The role of defects in the electrical properties of NbO2 thin film vertical devices" [AIP Advances 6, 125006 (2016)]. AIP Advances, 7 (1), 019901.Publisher
AIP Publishing © Author(s)Version
- VoR (Version of Record)
Publisher statement
This work is made available according to the conditions of the Creative Commons Attribution 4.0 International (CC BY 4.0) licence. Full details of this licence are available at: http://creativecommons.org/licenses/ by/4.0/Acceptance date
2017-01-05Publication date
2017-01-18Notes
This is an Open Access Article. It is published by AIP Publishing under the Creative Commons Attribution 4.0 International Licence (CC BY). Full details of this licence are available at: http://creativecommons.org/licenses/by/4.0/eISSN
2158-3226Publisher version
Language
- en
