High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering
journal contributionposted on 04.03.2015, 12:11 authored by Fabiana Lisco, Piotr Kaminski, Ali AbbasAli Abbas, Jake BowersJake Bowers, Gianfranco ClaudioGianfranco Claudio, Maria Losurdo, Michael WallsMichael Walls
CadmiumSulphide (CdS) is an important n-type semiconductor widely used as a windowlayer in thin film photovoltaics Copper IndiumSelenide, Copper IndiumGallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniformand smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment.
The authors are grateful to the Engineering and Physical Science Research Council (EP/J017361/1) for financial assistance under the Supergen SuperSolar Hub. They are also grateful to the Technology Strategy Board.
- Mechanical, Electrical and Manufacturing Engineering
- Centre for Renewable Energy Systems Technology (CREST)