Low-E glass improvement by the understanding and control of the Ag growth
Ag thin films are widely used in Low-E glass. High conductivity and low emissivity require a film thickness of at least 10 nm, which is costly for the industry. The cost of Low-E coating could be drastically reduced by lowering the amount of Ag without decreasing the conductivity. For that purpose, it is necessary to understand Ag film growth and related macroscopic properties. This can be studied by thin film growth simulations. In this work, we present results of Ag growth on ZnO by magnetron sputtering and related properties with multiscale simulations (DFT, Molecular Dynamics, and kinetic Monte Carlo). A new method to take into account defects generated by magnetron sputtering has been developed. Simulated conductivity has been compared with experiments and shows the same trend with a difference attributed to electron scattering at grain boundaries. To go further, we propose patterned substrates with and without defects to find an original tuneable process to increase the conductivity of ultrathin metallic films. We show that a patterned substrate does not increase the conductivity. Instead, it leads to a controlled growth of small islands which could be used for other applications requiring plasmonic properties. Finally, conductivity is higher for the same deposited thickness when the substrate has a higher defect density.
Funding
AGC Glass Europe
Fonds de la Recherche Scientifique de Belgique (F.R.S.-FNRS) under Grant No. 2.5020.11
Walloon Region
History
School
- Aeronautical, Automotive, Chemical and Materials Engineering
- Science
Department
- Materials
- Mathematical Sciences
Published in
Applied Surface ScienceVolume
611Issue
Part APublisher
ElsevierVersion
- AM (Accepted Manuscript)
Rights holder
© ElsevierPublisher statement
This paper was accepted for publication in the journal Applied Surface Science and the definitive published version is available at https://doi.org/10.1016/j.apsusc.2022.155600Acceptance date
2022-11-03Publication date
2022-11-08Copyright date
2022ISSN
0169-4332Publisher version
Language
- en