2022 MOCVD of II-VI HRT_Emitters for Voc Improvements to CdTe coatings-12-00261.pdf (6.64 MB)
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MOCVD of II-VI HRT/emitters for Voc improvements to CdTe solar cells

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journal contribution
posted on 18.02.2022, 14:09 by Andrew J Clayton, Ali AbbasAli Abbas, Peter J Siderfin, Stephen Jones, Ana Teloeken, Ochai Oklobia, Michael WallsMichael Walls, Stuart JC Irvine
CdTe solar cells were produced using metal organic chemical vapour deposition (MOCVD), which employed a (Zn,Al)S (AZS) high resistant transparent (HRT) layer at the transparent conducting oxide (TCO)/Cd(Zn)S emitter interface, to enable the higher annealing temperature of 440 °C to be employed in the chlorine heat treatment (CHT) process. The AZS HRT remained intact with conformal coverage over the TCO after performing the high CHT annealing, confirmed by cross-section scanning transmission electron microscopy coupled with energy-dispersive X-ray spectroscopy (STEM-EDX) characterisation, which also revealed the Cd(Zn)S emitter layer having been consumed by the CdTe absorber via interdiffusion. The more aggressive CHT resulted in large CdTe grains. The combination of AZS HRT and aggressive CHT increased open circuit voltage (Voc) and improved solar cell performance.

Funding

Europe Regional Development Fund (ERDF) through the Welsh European Funding Office (WEFO) on the 2nd Solar Photovoltaic Academic Research Consortium (SPARC II) project, case number 81133

Doped Emitters to Unlock Lowest Cost Solar Electricity

Engineering and Physical Sciences Research Council

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History

School

  • Mechanical, Electrical and Manufacturing Engineering

Published in

Coatings

Volume

12

Issue

2

Publisher

MDPI AG

Version

VoR (Version of Record)

Rights holder

© The Authors

Publisher statement

This is an Open Access Article. It is published by MDPI under the Creative Commons Attribution 4.0 International Licence (CC BY 4.0). Full details of this licence are available at: https://creativecommons.org/licenses/by/4.0/

Acceptance date

08/02/2022

Publication date

2022-02-16

Copyright date

2022

eISSN

2079-6412

Language

en

Depositor

Prof Michael Wall. Deposit date: 18 February 2022

Article number

261

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