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Mitigation of motor overvoltage in SiC-based drives using soft-switching voltage slew-rate (dv/dt) profiling

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journal contribution
posted on 11.03.2022, 09:18 authored by Wenzhi Zhou, Mohamed DiabMohamed Diab, Xibo Yuan, Chen Wei
In silicon carbide (SiC) device based motor drives, the high voltage slew rate (dv/dt) associated with the fast switching transitions results in excessive motor overvoltage, due to the reflected wave phenomenon, which increases the motor winding insulation stress and causes premature failure while raises electromagnetic interference (EMI) problems. This article proposes a voltage slew rate profiling approach to mitigate the motor overvoltage in SiC-based cable-fed drives. The proposed approach optimizes the rise/fall time of the output voltage according to the cable length, without altering the switching speed of the SiC devices. The proposed profiling approach is implemented using a soft-switching inverter. The optimum rise/fall time that can significantly mitigate the overvoltage is derived using frequency and time domain analysis. The auxiliary resonant commutated pole inverter (ARCPI) is adopted as a soft-switching inverter to experimentally verify the proposed slew rate profiling approach for the overvoltage mitigation. The analysis and experimental results show that the motor overvoltage is fully mitigated when the output voltage rise/fall time is set as the cable anti-resonance period, i.e. four times of the wave transmission time along the cable. Further, the slew-rate profiling approach along with the ARCPI reduces the switching loss and improve the EMI performance at high frequency region.

Funding

Insulation degradation and lifetime of inverter-fed machines with fast switching (high dv/dt) converters

Engineering and Physical Sciences Research Council

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History

School

  • Mechanical, Electrical and Manufacturing Engineering

Published in

IEEE Transactions on Power Electronics

Volume

37

Issue

8

Pages

9612-9628

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Version

AM (Accepted Manuscript)

Rights holder

© IEEE

Publisher statement

© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Acceptance date

24/02/2022

Publication date

2022-03-08

Copyright date

2022

ISSN

0885-8993

eISSN

1941-0107

Language

en

Depositor

Dr Mohamed Diab. Deposit date: 10 March 2022