Optical Transistor for Amplification of Radiation in a Broadband Terahertz Domain
journal contributionposted on 27.01.2020, 11:23 by Kristien Villegas, Feodor Kusmartsev, Yi Luo, Ivan Savenko
We propose a new type of optical transistor for a broadband amplification of THz radiation. It is made of a graphene–superconductor hybrid, where electrons and Cooper pairs couple by Coulomb forces. The transistor operates via the propagation of surface plasmons in both layers, and the origin of amplification is the quantum capacitance of graphene. It leads to THz waves amplification, the negative power absorption, and as a result, the system yields positive gain, and the hybrid acts like an optical transistor, operating with the terahertz light. It can, in principle, amplify even a whole spectrum of chaotic signals (or noise), that is required for numerous biological applications.
Institute for Basic Science in Korea (Project No. IBS-R024-D1) and the grant RFBR 18-29-20033 mk.