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Phonon assisted resonant tunnelling and its phonons control

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posted on 2016-10-13, 08:48 authored by Feodor Kusmartsev, V.D. Krevchik, M.B. Semenov, D.O. Filatov, Aleksei V. Shorokhov, A.A. Bukharaev, Y. Dakhnovsky, A.V. Nikolaev, Nikolai A. Pyataev, R.V. Zaytsev, P.V. Krevchik, I.A. Egorov, K. Yamamoto, A.K. Aringazin
© 2016 Pleiades Publishing, Inc.We observe a series of sharp resonant features in the tunnelling differential conductance of InAs quantum dots. We found that dissipative quantum tunnelling has a strong influence on the operation of nano-devices. Because of such tunnelling the current-voltage characteristics of tunnel contact created between atomic force microscope tip and a surface of InAs/GaAs quantum dots display many interesting peaks. We found that the number, position, and heights of these peaks are associated with the phonon modes involved. To describe the found effect we use a quasi-classical approximation. There the tunnelling current is related to a creation of a dilute instanton-anti-instanton gas. Our experimental data are well described with exactly solvable model where one charged particle is weakly interacting with two promoting phonon modes associated with external medium. We conclude that the characteristics of the tunnel nanoelectronic devices can thus be controlled by a proper choice of phonons existing in materials, which are involved.

History

School

  • Science

Department

  • Physics

Published in

JETP Letters

Pages

1 - 6

Citation

KUSMARTSEV, F.V. ...et al., 2016. Phonon assisted resonant tunnelling and its phonons control. JETP Letters, 104 (6), pp. 392-397.

Publisher

© Pleiades Publishing, Ltd.

Version

  • AM (Accepted Manuscript)

Publisher statement

This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/

Publication date

2016

Notes

This paper is a Russian translation of a paper published in English at http://dx.doi.org/10.1134/S0021364016180016

ISSN

0021-3640

eISSN

1090-6487

Language

  • ru

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