Preparation of silicon carbide by electrospraying of a polymeric precursor
journal contribution
posted on 2016-09-12, 11:56authored byDmitry A. Grigoriev, Mohan J. Edirisinghe, Xujin BaoXujin Bao, Julian R.G. Evans, Zofia B. Luklinska
Silicon carbide (SiC) coatings and films have been prepared for the first time
by electrostatic atomization of a solution of a polymeric precursor and deposition
on to alumina and zirconia substrates. The deposits were heated to 13008C prior
to their examination by X-ray energy-dispersive spectra and selected-area
diffraction in scanning and transmission electron microscopes. The results show
that these coatings and films are crystalline and probably consist of co-existing a-
SiC and b-SiC phases.
Funding
We thank the Royal Society of the UK for funding electrostatic atomisation
research at Queen Mary, University of London, by providing an equipment grant
to Professor Edirisinghe and a visiting post-doctoral fellowship to Dr Grigoriev.
History
School
Aeronautical, Automotive, Chemical and Materials Engineering
Department
Materials
Published in
Phil. Mag. Lett.
Volume
81
Pages
285 - 291
Citation
GRIGORIEV, D. ... et al., 2001. Preparation of silicon carbide by electrospraying of a
polymeric precursor. Philosophical Magazine Letters, 81 (4), pp.285-291.
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