Room Temperarature Surface passivation P_Kaminski.pdf (1.18 MB)
Room temperature surface passivation of silicon for screen printed c-Si solar cells by HiTUS reactive sputter deposition
journal contribution
posted on 2014-02-13, 11:46 authored by Gianfranco ClaudioGianfranco Claudio, Piotr Kaminski, Kevin BassKevin Bass, Michael WallsMichael WallsThe dielectric coatings used on silicon solar cells serve a dual purpose: a surface
passivation layer and as an antireflection coating. Silicon nitride films were deposited by
sputtering, using a HiTUS technology, on crystalline silicon wafers. Films were deposited
without substrate heating, which simplifies the deposition process, from a polycrystalline
silicon target in a mixed ambient of Argon, Nitrogen and Hydrogen gasses. After the
deposition, the minority carrier lifetime, refractive index and deposition rate were measured.
Photo conductance decay measurements show that the minority carrier lifetime increased up
to 26μs on a 40Ω/□ doped 1 Ω-cm p-type <100> Cz-Si pseudo square wafer (compared to
1μs measured for bare wafer) and up to 984μs for a double-side polished 3 Ω-cm Cz-Si wafer
(from ~70μs measured for uncoated wafer). Spectroscopic ellipsometry measurements
showed that the refractive index of the deposited films was 2.05 at λ=632.8nm; deposition
rate was measured at 22.4nm/min. The films were used to prepare screen-printed c-Si solar
cells. The resultant cells showed an efficiency of 15.14% with silicon nitride films grown
without the use of silane or substrate heating.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Research Unit
- Centre for Renewable Energy Systems Technology (CREST)
Citation
CLAUDIO, G. ... et al, 2014. Room temperature surface passivation of silicon for screen printed c-Si solar cells by HiTUS reactive sputter deposition. Applied Surface Science, 301, pp. 51–55.Publisher
© ElsevierVersion
- AM (Accepted Manuscript)
Publication date
2014Notes
This article was published in the journal, Applied Surface Science [© Elsevier B.V.] and the definitive version is available at: http://dx.doi.org/doi:10.1016/j.apsusc.2014.01.207Publisher version
Language
- en
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