posted on 2021-04-15, 14:47authored byQi Xie, Min Wang, Yong Xu, Xiaoke Li, Xin Zhou, Liang Hong, Luhua Jiang, Wen-Feng LinWen-Feng Lin
Energy band structure and interfacial compatibility of heterojunctions are crucial for
photocatalysts in promoting photogenerated charge separation and transfer. Here, a
combined strategy of vacancy engineering and quantum effect via a facile phosphating
process is reported, for the first time, to modulate the energy band structure and the
interface of ZnxCd1-xS/CoP quantum dots (ZCSv/CoP QDs) heterojunction. The
combined experimental and theoretical investigation revealed that phosphating process
transformed CoOx QDs to CoP QDs, and more importantly, generated considerable
amount of sulfur vacancies in ZCSv. As a result, a Type II ZCSv/CoP QDs
heterojunction with compatible interfaces was constructed via in-situ generated P-Zn,
P-Cd and S-Co bonds, which facilitated the separation and transfer of the
photogenerated charge and thus resulted in a high ability towards hydrogen evolution
under visible light. This work provides an effective and adaptable strategy to modulate
band structure and interfacial compatibility of heterojunctions via vacancy engineering
and quantum effect
Funding
Taishan Scholar Program of Shandong Province (ts201712046)
Key Research and Development Programme of Shandong Province (2019JZZY010905)
Natural Science Foundation of Shandong Province (ZR2020QB132)
Liaoning BaiQianWan Talents Program, and the Royal Society and the Newton Fund (NAF\R1\191294)
History
School
Aeronautical, Automotive, Chemical and Materials Engineering
This paper was accepted for publication in the journal Journal of Energy Chemistry and the definitive published version is available at https://doi.org/10.1016/j.jechem.2021.03.019