Single-layer bandpass active frequency selective surface
journal contribution
posted on 2008-07-24, 08:39 authored by Ghaffer I. Kiani, Kenneth L. Ford, Karu P. Esselle, Andrew R. Weily, Chinthana PanagamuwaChinthana Panagamuwa, John C. BatchelorA single-layer, bandpass, active FSS is presented. It shows good angle of incidence stability for TE incidence, at the operating
frequency of 2.45 GHz. It is based on circular loop aperture with
each unit cell having four PIN diodes. A novel method for dc biasing is
used. About 12 dB average variation in transmission loss, between ON
and OFF states, has been experimentally achieved at 2.45 GHz.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Citation
KIANI, G.I. ... et al, 2008. Single-layer bandpass active frequency selective surface. Microwave and optical technology letters, 50 (8), pp. 2149-2151Publisher
© John Wiley and SonsPublication date
2008Notes
This article is Restricted Access. It was published in the journal, Microwave and optical technology letters [© John Wiley and Sons] and is available at: http://www3.interscience.wiley.com/journal/37176/homeISSN
0895-2477Language
- en
