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Solution-processed CuIn(S,Se)2 absorber layers for application in thin film solar cells

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journal contribution
posted on 27.03.2015, 12:22 by Panagiota Arnou, Carl S. Cooper, Andrei V. Malkov, Jake W. Bowers, Michael Walls
A pure solution-based approach is proposed for the fabrication of high quality CuIn(S,Se)2 (CIS) thin films. This is an alternative procedure to the hydrazine-based route and involves the dissolution of metal chalcogenides in a safer solvent combination. The solvent mixture used in this work has the same advantages as hydrazine, such as good solubility of metal chalcogenides and clean decomposition, which is a prerequisite for high quality absorber layers. The solvents that are used are also much less toxic compared to hydrazine and can potentially result in a more feasibly industrially scalable deposition technology for CIS and the related alloys including Cu(In,Ga)(S,Se)2 (CIGS). The characterization of the obtained thin film material verifies the presence of the CIS chalcopyrite phase with good crystal growth.

Funding

The authors would like to acknowledge EPSRC [grant number EP/J017361/1] Supergen SuperSolar funding for supporting this project.

History

School

  • Mechanical, Electrical and Manufacturing Engineering

Published in

Thin Solid Films

Volume

582

Pages

31 - 34

Citation

ARNOU, P. ... et al, 2015. Solution-processed Culn(S,Se)2 absorber layers for application in thin film solar cells. Thin Solid Films, 582, pp.31–34.

Publisher

Elsevier / © The Authors

Version

VoR (Version of Record)

Publisher statement

This work is made available according to the conditions of the Creative Commons Attribution 3.0 Unported (CC BY 3.0) licence. Full details of this licence are available at: http://creativecommons.org/licenses/by/3.0/

Publication date

2014-10-30

Notes

This is an Open Access Article. It is published by Elsevier under the Creative Commons Attribution 3.0 Unported Licence (CC BY). Full details of this licence are available at: http://creativecommons.org/licenses/by/3.0/

ISSN

0040-6090

Language

en