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Solution processing of CuIn(S,Se)2 and Cu(In,Ga)(S,Se)2 thin film solar cells using metal chalcogenide precursors

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journal contribution
posted on 13.10.2016 by Nayia Arnou, Carl Cooper, Sona Ulicna, Ali Abbas, Alex Eeles, Lewis Wright, Andrei Malkov, Michael Walls, Jake Bowers
In order to realize the true low cost potential of Cu(In,Ga)(S,Se)2 (CIGS) thin film solar cells, high performance needs to be combined with simple and easily controllable atmospheric-based deposition processes. A molecular solution-based approach for CIGS deposition is proposed, using metal chalcogenide precursors dissolved in an amine-thiol solvent combination. CIGS thin films were sprayed with varying Ga content and the sprayed films were incorporated into solar cells. The effect of the Ga content on the material and device properties is investigated. A champion power conversion efficiency of 9.8% (active area) was achieved, which highlights the potential of this methodology.

Funding

The authors would like to acknowledge EPSRC Supergen SuperSolar Hub for funding to support this project (EP/N508457/1, EP/J017361/1). The top contact grids and AR coating were deposited at Nanoco Technologies plc (UK).

History

School

  • Science

Department

  • Chemistry

Published in

Thin Solid Films

Citation

ARNOU, P. ... et al., 2017. Solution processing of CuIn(S,Se)2 and Cu(In,Ga)(S,Se)2 thin film solar cells using metal chalcogenide precursors. Thin Solid Films, 633, pp. 76-80.

Publisher

© The Authors. Published by Elsevier B.V

Version

VoR (Version of Record)

Publisher statement

This work is made available according to the conditions of the Creative Commons Attribution 4.0 International (CC BY 4.0) licence. Full details of this licence are available at: http://creativecommons.org/licenses/ by/4.0/

Acceptance date

04/10/2016

Publication date

2017

Notes

This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).

ISSN

0040-6090

Language

en

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