posted on 2016-06-21, 13:28authored byMukul Bhatnagar, Mukesh Ranjan, Kenny JolleyKenny Jolley, Roger Smith, Subroto Mukherjee
In-situ Rutherford Backscattering Spectrometry (RBS) and Molecular Dynamics (MD) simulations have been used to investigate the growth dynamics of silver on a flat and the rippled silica surface. The calculated sticking coeficient of silver over a range of incidence angles shows a similar behaviour to the experimental results for an average surface binding energy of a silver adatom of 0.2 eV. This value was used to parameterise the MD
model of the cumulative deposition of silver in order to understand the growth mechanisms. Both the model and the RBS results show marginal difference between the atomic concentration of silver on the at and the rippled silica surface, for the same growth conditions. For oblique incidence, cluster growth occurs mainly on the leading edge of the rippled structure.
Funding
This work was funded by the UKIERI Grant: IND/CONT/E/13-14/642 and the programme DST-Nanomission.
History
School
Science
Department
Mathematical Sciences
Published in
Applied Physics Letters
Volume
108
Pages
223101-1 - 223101-4 (4)
Citation
BHATNAGAR, M. ...et al., 2016. Sub-monolayer growth of Ag on flat and nanorippled SiO2 surfaces. Applied Physics Letters, 108, pp. 223101-1 - 223101-4.
Publisher
American Institute of Physics (AIP)
Version
AM (Accepted Manuscript)
Publisher statement
This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/
Acceptance date
2016-06-01
Publication date
2016
Notes
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in BHATNAGAR, M. ...et al., 2016. Sub-monolayer growth of Ag on flat and nanorippled SiO2 surfaces. Applied Physics Letters, 108, pp. 223101-1 - 223101-4 and may be found at http://dx.doi.org/10.1063/1.4952950.