Sub-monolayer growth of Ag on flat and nanorippled SiO2 surfaces
journal contributionposted on 2016-06-21, 13:28 authored by Mukul Bhatnagar, Mukesh Ranjan, Kenny JolleyKenny Jolley, Roger Smith, Subroto Mukherjee
In-situ Rutherford Backscattering Spectrometry (RBS) and Molecular Dynamics (MD) simulations have been used to investigate the growth dynamics of silver on a flat and the rippled silica surface. The calculated sticking coeficient of silver over a range of incidence angles shows a similar behaviour to the experimental results for an average surface binding energy of a silver adatom of 0.2 eV. This value was used to parameterise the MD model of the cumulative deposition of silver in order to understand the growth mechanisms. Both the model and the RBS results show marginal difference between the atomic concentration of silver on the at and the rippled silica surface, for the same growth conditions. For oblique incidence, cluster growth occurs mainly on the leading edge of the rippled structure.
This work was funded by the UKIERI Grant: IND/CONT/E/13-14/642 and the programme DST-Nanomission.
- Mathematical Sciences
Published inApplied Physics Letters
Pages223101-1 - 223101-4 (4)
CitationBHATNAGAR, M. ...et al., 2016. Sub-monolayer growth of Ag on flat and nanorippled SiO2 surfaces. Applied Physics Letters, 108, pp. 223101-1 - 223101-4.
PublisherAmerican Institute of Physics (AIP)
- AM (Accepted Manuscript)
Publisher statementThis work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/
NotesThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in BHATNAGAR, M. ...et al., 2016. Sub-monolayer growth of Ag on flat and nanorippled SiO2 surfaces. Applied Physics Letters, 108, pp. 223101-1 - 223101-4 and may be found at http://dx.doi.org/10.1063/1.4952950.