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Sub-terahertz amplification in a semiconductor superlattice with moving charge domains

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journal contribution
posted on 17.04.2015, 12:56 by V.V. Makarov, Alexander E. Hramov, Alexey A. Koronovskii, Kirill Alekseev, V.A. Maximenko, Mark GreenawayMark Greenaway, T.M. Fromhold, Olga I. Moskalenko, Alexander BalanovAlexander Balanov
We theoretically study the high-frequency response of charge domains traveling through a strongly coupled semiconductor superlattice with an applied harmonic electromagnetic signal. Our calculations show that the superlattice alone can amplify signals with a frequency close to the domain transient frequency. Moreover, we show that if the superlattice is connected to a resonator, amplification becomes possible for much higher frequencies of the external signal (several hundred GHz). These promising results open the way to using semiconductor superlattices as efficient sub-THz amplifiers.

Funding

Russian Scientific Foundation supported study of the semiconductor superlattice coupled to resonator (Grant No. 14-12-00222). M.T.G. acknowledges financial support from the Leverhulme Trust (UK).

History

School

  • Science

Department

  • Physics

Published in

APPLIED PHYSICS LETTERS

Volume

106

Issue

4

Pages

? - ? (4)

Citation

MAKAROV, V.V. ... et al, 2015. Sub-terahertz amplification in a semiconductor superlattice with moving charge domains. Applied Physics Letters, 106 (4), 043503.

Publisher

© American Institute of Physics

Version

VoR (Version of Record)

Publisher statement

This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/

Publication date

2015

Notes

This article was published in the journal Applied Physics Letters [© AIP Publishing]. It is also available at: http://dx.doi.org/10.1063/1.4906531

ISSN

0003-6951

Language

en

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