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The effect of collector doping on the high-frequency generation in strongly coupled semiconductor superlattice
journal contributionposted on 2015-05-18, 15:24 authored by V.A. Maksimenko, V.V. Makarov, Alexey A. Koronovskii, Kirill Alekseev, Alexander BalanovAlexander Balanov, Alexander E. Hramov
This letter focuses on the analysis of the spatio-temporal dynamics of charge domains in strongly coupled semiconductor superlattices with the Ohmic emitter and collector contacts. Our numerical simulations, based on the semiclassical approximation of the electron transport, show that the collector doping can dramatically affect the charge dynamics in the semiconductor structure and, therefore, the output AC power. We demonstrate that the appropriately chosen doping of the collector contacts can considerably increase the power of the generated signal.
CitationMAKSIMENKO, V.A. ... et al, 2015. The effect of collector doping on the high-frequency generation in strongly coupled semiconductor superlattice. EPL, 109 (4), 47007.
PublisherIOP Publishing (© EPLA)
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Publisher statementThis work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) licence. Full details of this licence are available at: https://creativecommons.org/licenses/by-nc-nd/4.0/
NotesThis paper is closed access until 4th March 2016.