PhysRevB.99.125139.pdf (733.01 kB)
Thickness dependence of electron-electron interactions in topological p-n junctions
journal contributionposted on 2019-03-26, 14:51 authored by Dirk Backes, Danhong Huang, Rhodri Mansell, Martin Lanius, Jorn Kampmeier, David A. Ritchie, Gregor Mussler, Godfrey Gumbs, Detlev Grutzmacher, Vijay Narayan
Electron-electron interactions in topological p-n junctions consisting of vertically stacked topological insulators are investigated. n-type Bi2Te3 and p-type Sb2Te3 of varying relative thicknesses are deposited using molecular beam epitaxy and their electronic properties measured using low-temperature transport. The screening factor is observed to decrease with increasing sample thickness, a finding which is corroborated by semi-classical Boltzmann theory. The number of two-dimensional states determined from electron-electron interactions is larger compared to the number obtained from weak-antilocalization, in line with earlier experiments using single layers.
Published inPhysical review B: Condensed matter and materials physics
CitationBACKES, D. ... et al., 2019. Thickness dependence of electron-electron interactions in topological p-n junctions. Physical review B: Condensed matter and materials physics, 99: 125139.
Publisher© American Physical Society
NotesThis paper was published in the journal Physical review B: Condensed matter and materials physics and the definitive published version is available at https://doi.org/10.1103/PhysRevB.99.125139