PhysRevB.99.125139.pdf (733.01 kB)
Download fileThickness dependence of electron-electron interactions in topological p-n junctions
journal contribution
posted on 2019-03-26, 14:51 authored by Dirk Backes, Danhong Huang, Rhodri Mansell, Martin Lanius, Jorn Kampmeier, David A. Ritchie, Gregor Mussler, Godfrey Gumbs, Detlev Grutzmacher, Vijay NarayanElectron-electron interactions in topological p-n junctions consisting of vertically stacked topological insulators are investigated. n-type Bi2Te3 and p-type Sb2Te3 of varying relative thicknesses are deposited using molecular beam epitaxy and their electronic properties measured using low-temperature transport. The screening factor is observed to decrease with increasing sample thickness, a finding which is corroborated by semi-classical Boltzmann theory. The number of two-dimensional states determined from electron-electron interactions is larger compared to the number obtained from weak-antilocalization, in line with earlier experiments using single layers.
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