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Thickness dependence of electron-electron interactions in topological p-n junctions

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posted on 26.03.2019, 14:51 authored by Dirk Backes, Danhong Huang, Rhodri Mansell, Martin Lanius, Jorn Kampmeier, David A. Ritchie, Gregor Mussler, Godfrey Gumbs, Detlev Grutzmacher, Vijay Narayan
Electron-electron interactions in topological p-n junctions consisting of vertically stacked topological insulators are investigated. n-type Bi2Te3 and p-type Sb2Te3 of varying relative thicknesses are deposited using molecular beam epitaxy and their electronic properties measured using low-temperature transport. The screening factor is observed to decrease with increasing sample thickness, a finding which is corroborated by semi-classical Boltzmann theory. The number of two-dimensional states determined from electron-electron interactions is larger compared to the number obtained from weak-antilocalization, in line with earlier experiments using single layers.

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  • Science

Department

  • Physics

Published in

Physical review B: Condensed matter and materials physics

Citation

BACKES, D. ... et al., 2019. Thickness dependence of electron-electron interactions in topological p-n junctions. Physical review B: Condensed matter and materials physics, 99: 125139.

Publisher

© American Physical Society

Acceptance date

28/02/2019

Publication date

2019-03-25

Notes

This paper was published in the journal Physical review B: Condensed matter and materials physics and the definitive published version is available at https://doi.org/10.1103/PhysRevB.99.125139

ISSN

1098-0121

Language

en

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