UDocuments19th PVSECHibberd_SolMat_2010_EQEaSi_Revised_Submitted.pdf (569.45 kB)
Voltage-dependent quantum efficiency measurements of amorphous silicon multijunction mini-modules
journal contributionposted on 2010-10-12, 10:09 authored by Christopher J. Hibberd, Foteini Plyta, Christos Monokroussos, Martin BlissMartin Bliss, Tom BettsTom Betts, Ralph Gottschalg
Multi-junction solar cells have the potential to provide higher efficiencies than single junction devices and to reduce the impact of Staebler-Wronski degradation on amorphous silicon (a-Si)devices. They could, therefore, reduce the cost of solar electricity. However, their characterization presents additional challenges over that of single junction devices. Achieving acceptable accuracy of any current-voltage calibration requires correction of the current-voltage data with external quantum efficiency measurements and spectral mismatch calculations. This paper presents voltage dependant EQE curves for both single junction and double junction a-Si solar cells, along with dispersion curves extracted from these data. In the case of single junction a-Si devices the mismatch factor is known to be voltage dependent and a similar trend is shown to apply to multi-junction devices as well. However, the error introduced into current voltage calibrations due to this bias dependence is found to be < 1% for spectral mismatch calculations.
- Mechanical, Electrical and Manufacturing Engineering
CitationHIBBERD, C.J. ... et al, 2011. Voltage-dependent quantum efficiency measurements of amorphous silicon multijunction mini-modules. Solar Energy Materials and Solar Cells, 95 (1), pp. 123-126.
Publisher© Elsevier B.V.
- AM (Accepted Manuscript)