Angle-resolved photoemission in doped charge-transfer Mott insulators
preprintposted on 05.04.2006, 15:36 by A.S. Alexandrov, C.J. Dent
A theory of angle-resolved photoemission (ARPES) in doped cuprates and other charge-transfer Mott insulators is developed taking into account the realistic (LDA+U) band structure, (bi)polaron formation due to the strong electron-phonon interaction, and a random field potential. In most of these materials the first band to be doped is the oxygen band inside the Mott-Hubbard gap. We derive the coherent part of the ARPES spectra with the oxygen hole spectral function calculated in the non-crossing (ladder) approximation and with the exact spectral function of a one-dimensional hole in a random potential. Some unusual features of ARPES including the polarisation dependence and spectral shape in YBa2Cu3O7 and YBa2Cu4O8 are described without any Fermi-surface, large or small. The theory is compatible with the doping dependence of kinetic and thermodynamic properties of cuprates as well as with the d-wave symmetry of the superconducting order parameter.