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Direct current generation due to wave mixing in semiconductors

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preprint
posted on 12.04.2006, 12:47 by Kirill Alekseev, M.V. Erementchouk, Feodor Kusmartsev
We describe a novel effect of the generation of direct current which may arise in semiconductors or semiconductor microstructures due to a mixing of coherent electromagnetic radiations of commensurate frequencies. The effect is, in essence, due to a nonparabolicity of the electron energy bands and is stronger in systems where this nonparabolicity is greater. We have made exact calculations in the framework of the Kane model, applicable to narrow gap semiconductors and the tight-binding model which we employ for a description of a semiconductor superlattice.

History

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  • Science

Department

  • Physics

Pages

165099 bytes

Publication date

1999

Notes

This is a pre-print. It is also available at http://arxiv.org/abs/cond-mat/9903092. The definitive version, published in Europhysics Letters, is available at: http://www.iop.org/EJ/journal/EPL.

Language

en