An experimental and theoretical study of the hot-carrier energy distribution in VLSI MOSFETs
thesisposted on 2017-11-03, 11:46 authored by Talal S. Al-Harbi
MOSFET devices have, recently, been considered the basic building element in any electronic IC circuit or system. The great advances achieved by modem technologies has made it possible to scale-down considerably the MOSFET device (channel length L smaller than 0.5μm and oxide thickness smaller than 400Å) which appreciably influences the device performance and its operating parameters. [Continues.]
Saudi Arabia, Government. King Abdulaziz University, Jeddah.
Publisher© Talal S. Al-Harbi
Publisher statementThis work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 2.5 Generic (CC BY-NC-ND 2.5) licence. Full details of this licence are available at: http://creativecommons.org/licenses/by-nc-nd/2.5/
NotesA Doctoral Thesis. Submitted in partial fulfilment of the requirements for the award of Doctor of Philosophy at Loughborough University.