An experimental and theoretical study of the hot-carrier energy distribution in VLSI MOSFETs
thesisposted on 03.11.2017, 11:46 by Talal S. Al-Harbi
MOSFET devices have, recently, been considered the basic building element in any electronic IC circuit or system. The great advances achieved by modem technologies has made it possible to scale-down considerably the MOSFET device (channel length L smaller than 0.5μm and oxide thickness smaller than 400Å) which appreciably influences the device performance and its operating parameters. [Continues.]
Saudi Arabia, Government. King Abdulaziz University, Jeddah.