Thesis-1996-AlHarbi.pdf (4.92 MB)
Download fileAn experimental and theoretical study of the hot-carrier energy distribution in VLSI MOSFETs
thesis
posted on 2017-11-03, 11:46 authored by Talal S. Al-HarbiMOSFET devices have, recently, been considered the basic building element
in any electronic IC circuit or system. The great advances achieved by modem
technologies has made it possible to scale-down considerably the MOSFET device
(channel length L smaller than 0.5μm and oxide thickness smaller than 400Å) which
appreciably influences the device performance and its operating parameters. [Continues.]
Funding
Saudi Arabia, Government. King Abdulaziz University, Jeddah.
History
School
- Science
Department
- Physics
Publisher
© Talal S. Al-HarbiPublisher statement
This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 2.5 Generic (CC BY-NC-ND 2.5) licence. Full details of this licence are available at: http://creativecommons.org/licenses/by-nc-nd/2.5/Publication date
1996Notes
A Doctoral Thesis. Submitted in partial fulfilment of the requirements for the award of Doctor of Philosophy at Loughborough University.Language
- en