Deformation mechanisms in 6H silicon carbide: experimental and numerical analysis

This research aims at developing a fundamental understanding of the deformation mechanisms in single crystal 6H silicon carbide (6H-SiC). Owing to the continuous miniaturization of electronics devices, silicon carbide (SiC) continues to be of exceptional interest to the electronic industries. It is poised to replace silicon-based MEMS devices used in the most technically demanding environment due to its excellent bandgap characteristics, extreme hardness, high thermal conductivity, chemical inertness and wear resistivity. On the other hand, SiC can also be used as structural components in the aerospace, automotive and nuclear industries where components are subjected to high temperature, high power frequency or irradiated environments. Components from SiC can range from component dimensions as small as 0.1μm to the largest in the macroscopic scale with dimensions in centimetres. A good understanding of deformation behaviour is, therefore, crucial for reliable component design across scales. Understanding the deformation mechanisms could also help to inspire new insight in designing novel components with controlled mechanical properties. In this thesis, the plastic deformation in single crystal 6H-SiC was investigated. [Continues.]