Electrical overstress failure in GaAs MESFET structures
thesisposted on 26.11.2012, 12:41 by Andrew J. Franklin
An experimental and theoretical analysis has been carried out into the effects of electrostatic discharge and constant power electrical overstress in GaAs MES structures. An experimental system has been set up to measure the electrical and physical characteristics of such devices when subject to electrical overstress. This system includes computer controlled equipment to analyse the electrical failure waveforms. The results from the experimental study have been analysed to establish any patterns which characterise ESD breakdown. Using a new thermal breakdown model, analytical predictions of the power required to degrade these devices, for both constant power, and electrostatic discharge breakdown, have been carried out.
- Mechanical, Electrical and Manufacturing Engineering