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Plasma-assisted deposition using an unbalanced magnetron

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thesis
posted on 11.12.2017, 15:22 authored by Hussein A. Ja'fer
It is well known that ion bombardment of growing films can strongly influence their microstructure and consequently their physical properties. The available technology for ion assisted deposition, particularly where separate sources are used for the deposition flux and the ion flux, is difficult to implement in many production situations. The planar magnetron provides a controllable ion flux while retaining the many other desirable features of simplicity, high deposition rate, geometric versatility and tolerance of reactive gases. This assists in the implementation of ion beam assisted deposition in both research and production. [Continues.]

Funding

Iraq, Ministry of Higher Education and Scientific Research.

History

School

  • Science

Department

  • Physics

Publisher

© H.A. Ja'fer

Publisher statement

This work is made available according to the conditions of the Creative Commons Attribution-NonCommercial-NoDerivatives 2.5 Generic (CC BY-NC-ND 2.5) licence. Full details of this licence are available at: http://creativecommons.org/licenses/by-nc-nd/2.5/

Publication date

1993

Notes

A Doctoral Thesis. Submitted in partial fulfilment of the requirements for the award of Doctor of Philosophy at Loughborough University.

Language

en

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