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Microstructural evolution and protrusion simulations of Cu-TSVs under different loading conditions

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journal contribution
posted on 22.10.2019, 09:19 authored by Jinxin Liu, Zhiheng Huang, Paul ConwayPaul Conway, Yang Liu
Thermal stress-induced protrusions of copper through-silicon-vias (Cu-TSVs) during thermal processing pose substantial reliability concerns in three-dimensional (3D) system integration. In this study, a phase-field-crystal (PFC) model is used to investigate the protrusions and microstructural evolutions of blind Cu-TSVs under different loading conditions. Protrusions are observed only when the TSVs are under εx, εy, and γxy, whereas no protrusions are observed when the TSVs are subjected to pure shear strains γyx. The simulation results suggest that the grains in the top layer of a TSV contribute more to both the protrusion profile and the protrusion height than the grains in the lower layers. Moreover, the protrusion is larger when the misorientation among the grains is larger and the grain size along the y-direction is smaller. In addition, a phenomenological model linking protrusion and microstructural factors and a visual guide from the viewpoint of plastic flow are provided to understand the origins of Cu-TSV protrusion.

Funding

National Natural Science Foundation of China (NSFC) under Grant No. 51832002

Guangdong Natural Science Foundation under Grant No. 2015A030312011

Zhuhai Key Technology Laboratory of Wide Bandgap Semiconductor Power Electronics under Grant No. 20167612042080001

Zhuhai Rossini Watch Industry Ltd.

History

School

  • Mechanical, Electrical and Manufacturing Engineering

Published in

Journal of Electronic Packaging

Volume

142

Issue

1

Publisher

American Society of Mechanical Engineers (ASME)

Version

AM (Accepted Manuscript)

Rights holder

© ASME

Publisher statement

This paper was accepted for publication in the journal Journal of Electronic Packaging and the definitive published version is available at https://doi.org/10.1115/1.4044648.

Publication date

2019-10-10

Copyright date

2020

ISSN

1043-7398

eISSN

1528-9044

Other identifier

Paper No: EP-19-1058

Language

en

Depositor

Prof Paul Conway. Deposit date: 21 October 2019

Article number

011009

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