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Processing-structure-protrusion relationship of 3D Cu TSVs: control at the atomic scale

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journal contribution
posted on 22.10.2019, 08:20 by Jinxin Liu, Zhiheng Huang, Paul ConwayPaul Conway, Yang Liu
A phase-field-crystal model is used to investigate the processing-structure-protrusion relationship of blind Cu through-silicon vias (TSVs) at the atomic scale. A higher temperature results in a larger TSV protrusion. Deformation via dislocation motion dominates at temperatures lower than around 300∘C, while both diffusional and dislocation creep occur at temperatures greater than around 300∘C. TSVs with smaller sidewall roughness Ra and wavelength λa exhibit larger protrusions. Moreover, different protrusion profiles are observed for TSVs with different grain structures. Both protrusions and intrusions are observed when a single grain is placed near the TSV top end, while the top surface protrudes near both edges when it contains more grains. Under symmetric loading, coalescence of the grains occurs near the top end, and a symmetric grain structure can accelerate this process. The strain distributions in TSVs are calculated, and the eigenstrain projection along the vertical direction can be considered an index to predict the TSV protrusion tendency.

Funding

National Natural Science Foundation of China (NSFC) under grant 51832002

Guangdong Natural Science Foundation under grant 2015A030312011

Zhuhai Key Technology Laboratory of Wide Bandgap Semiconductor Power Electronics under grant 20167612042080001

Zhuhai Rossini Watch Industry Ltd.

History

School

  • Mechanical, Electrical and Manufacturing Engineering

Published in

IEEE Journal of the Electron Devices Society

Volume

7

Pages

1270 - 1276

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Version

VoR (Version of Record)

Publication date

2019-10-15

Copyright date

2019

eISSN

2168-6734

Language

en

Depositor

Prof Paul Conway. Deposit date: 21 October 2019

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